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Series in Microelectronics
edited by Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Hans Melchior
George S. Moschytz
Gerhard Tröster
Simon Brugger
Computation of
Semiconductor Properties
Using Moments of the Inverse Scattering Operator
of the Boltzmann Equation.
2006; 324 pages. € 64,00. ISBN
3-86628-062-9
This work
investigates physical objects called moments of the inverse scattering operator
(MISO) of the Boltzmann equation. These moments allow to compute all quantities
which appear in semiconductor transport theory (e.g. mobilities, Hall factors,
Langevin noise sources, ...) in an exact way, i.e. without using the well-known
relaxation time approximation. In the first part, the existence and uniqueness
of the MISOs are proven, and a numerical algorithm is given to actually compute
all of them. The second part deals with fluctuation theory. The third part
introduces the numerical methods and physical models underlying this work. In
the last part the developed theory is applied to bulk silicon and silicon
devices.
Simon Brugger was born in Geneva, Switzerland, on July 17, 1975.
From 1993 to 1995 he took part three consecutive times in the international
chemistry Olympiad (IChO) as member of the Swiss team. He studied physics at
the Swiss Federal Institute of Technology (ETH) in Zurich. During an exchange
year at the Humboldt University in Berlin he worked in the laboratory of Prof.
T.W. Masselink in the domain of Quantum dots. He finished his studies at ETH
Zurich with the master thesis entitled Two
Homogeneous Cosmological Models of Quintessence in general relativity which
was supervised by Prof. N. Straumann. In February 2001 he joined the Integrated
Systems Laboratory at ETH, where he received his PhD degree in 2005. His
research interests focus on semiconductor transport theory, fluctuation theory,
numerical device simulation, and numerical mathematics.
Keywords: Halbleiter (semiconductor), Silizium (silicon), Boltzmanngleichung
(Boltzmann equation), Inverse Streuoperator (inverse scattering operator),
Jenseits der Relaxationszeit-Näherung (beyond the relaxation time
approximation), Monte Carlo (Monte Carlo), Transportmodelle (transport models),
Impedanzfeld-Methode (impedance field method), Methode der Finiten Elemente
(finite element method), Simulation von elektronischen Bauelementen (simulation
of electronic devices), Rauschparameter (noise parameters)
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