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S

Series in Microelectronics

edited by       Wolfgang Fichtner
                        Qiuting Huang
                        Heinz Jäckel
                        Hans Melchior
                        George S. Moschytz
                        Gerhard Tröster

Vol. 170

Melanie Etherton

Charged Device Model (CDM) ESD in ICs:
Physics, Modeling, and Circuit Simulation.

2006; 234 pages. € 64,00. ISBN 3-86628-067-X

CDM ESD events are an increasingly important reliability problem for the microelectronics industry. In order to deal with this issue in the future, the capability to predict and optimize the robustness of integrated circuits for CDM ESD events is essential. This thesis investigates physical effects that influence the device behavior in the current and time domain of CDM ESD events. Modeling approaches are introduced for CDM specific device physical effects and parasitic elements in the IC and the CDM measurement setup. A parameter extraction method is presented that can be applied to determine the transient high-current parameters of devices under CDM conditions. The influence of parasitic elements of the IC and the measurement setup on the CDM behavior is studied. Based on these results, a CDM circuit simulation method is proposed. The capability of this method to predict CDM robustness of integrated circuits and to determine weak circuit elements is demonstrated in two case studies.

Melanie Etherton received her Diploma in Electrical Engineering from the University of Erlangen, Germany, in December 2000. After working as mixed-signal ASIC design engineer at Elmos Semiconductor Süd GmbH in Munich, Germany, she joined the Integrated System Laboratory of the Swiss Federal Institute of Technology (ETH) in Zurich as external PhD student in 2002. At Robert Bosch GmbH in Reutlingen, Germany, she was involved in research and development for ESD related circuit simulation, with emphasis on the behavior of integrated circuits during the fast transients of Charge Device Model (CDM) ESD. In fall 2005, Melanie Etherton joined Freescale Semiconductor, Inc. in Austin, Texas, USA, where she is responsible for development of ESD on-chip protection for advanced CMOS technologies.

Keywords: Elektrostatische Entladung, ESD, Charged Device Model, CDM, Halbleiter, Schaltungssimulation.

Series in Microelectronics

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