Series in Microelectronics
edited by
Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Hans Melchior
George S. Moschytz
Gerhard Tröster
Melanie
Etherton
Charged Device Model (CDM) ESD in ICs:
Physics, Modeling, and Circuit Simulation.
2006; 234 pages. € 64,00. ISBN 3-86628-067-X
CDM ESD events are an increasingly important
reliability problem for the microelectronics industry. In order to deal with
this issue in the future, the capability to predict and optimize the robustness
of integrated circuits for CDM ESD events is essential. This thesis
investigates physical effects that influence the device behavior in the current
and time domain of CDM ESD events. Modeling approaches are introduced for CDM
specific device physical effects and parasitic elements in the IC and the CDM measurement
setup. A parameter extraction method is presented that can be applied to
determine the transient high-current parameters of devices under CDM
conditions. The influence of parasitic elements of the IC and the measurement
setup on the CDM behavior is studied. Based on these results, a CDM circuit
simulation method is proposed. The capability of this method to predict CDM
robustness of integrated circuits and to determine weak circuit elements is
demonstrated in two case studies.
Melanie
Etherton received her Diploma in Electrical Engineering from
the University of Erlangen, Germany, in December 2000. After working as
mixed-signal ASIC design engineer at Elmos Semiconductor Süd GmbH in Munich,
Germany, she joined the Integrated System Laboratory of the Swiss Federal
Institute of Technology (ETH) in Zurich as external PhD student in 2002. At
Robert Bosch GmbH in Reutlingen, Germany, she was involved in research and
development for ESD related circuit simulation, with emphasis on the behavior
of integrated circuits during the fast transients of Charge Device Model (CDM)
ESD. In fall 2005, Melanie Etherton joined Freescale Semiconductor, Inc. in
Austin, Texas, USA, where she is responsible for development of ESD on-chip
protection for advanced CMOS technologies.
Keywords: Elektrostatische Entladung, ESD, Charged Device Model, CDM,
Halbleiter, Schaltungssimulation.
Direkt bestellen bei / to order directly from: Hartung.Gorre@t-online.de