Series in Microelectronics
edited by
Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Gerhard Tröster
Bernd Witzigmann
Timm Höhr
Quantum-Mechanical
Modeling of Transport
Parameters for MOS Devices.
2006; XIII, 134 pages. €
64,00. ISBN 3-86628-087-4
Based on
simulations with the device simulator DESSIS_ISE, this work investigates implications
of quantization on the modeling of three kinds of transport effects in MOS
devices. The first part deals with the question to what extend tunneling
currents through insulating barriers can be described within the quantum
drift-diffusion model. The second part introduces and investigates a consistent
way of modeling Shockley-Read-Hall recombination in the presence of
quantization. The third part describes a model for the drift mobility in MOS
channels. Special emphasis is put on the influence of remote Coulomb scattering
by impurities in the polysilicon gate electrode.
Timm Höhr
was born in Celle, Germany, on December 10, 1972. He studied physics at the
University of Konstanz where he received his Dipl.-Phys. degree in 2000. In the
academic year 1996/97 he attended the State University of New York at Stony
Brook. In 2001 he joined the Integrated Systems Laboratory at ETH Zurich where
he worked on numerical modeling of quantization and related transport phenomena
in MOS devices.
Keywords:
semiconductor device modeling, quantum transport, tunneling effect,
Shockley-Read-Hall recombination, drift mobility, density gradient model,
recombination lifetime, remote Coulomb scattering, ultrathin gate oxide,
quantum confinement, quantum effects, MOS diode, MOSFET, quantum
drift-diffusion model, resonant tunneling, negative differential resistance,
quantum well, inversion layer mobility.
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