Series in Microelectronics
edited by
Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Gerhard Tröster
Bernd Witzigmann
Chiara Corvasce,
Mobility and
Impact Ionization in Silicon
at High Temperature
2007, VIII, 210 pages. € 64,00. ISBN 3-86628-136-6
This work presents an investigation of mobility and impact ionization in
silicon at high temperature. Proper device architectures and materials have
been developed and novel technology solutions for wire bonding and packaging
have been used for extending the temperature range. The test structure design
and the extraction of the physical parameters have been assisted by two and three-dimensional
TCAD simulations. The mobility has been measured by the Hall technique up to
1000 K thanks to the use of Ti/TiN interconnections in combination with
junction-free van der Pauw resistors. A new extraction methodology has been
proposed to account for the reduced Hall voltage in lightly doped silicon due
to the conduction of minority carriers. The hole and the electron impact
ionization coefficients have been determined as a function of the electrical
field up to 673 K and 613 K, respectively, by measurements of the
multiplication factor in bipolar and static induction transistors.
About the Author
Chiara Corvasce received the M.S.
Degree in Physics in 1994 from the University of Bari (Italy). In 1996 she
joined the Memory Product Group of STMicroelectronis in Catania (Italy) working
on non-volatile memory devices and from 1998 up to 2002 in the development of a
ferroelectric memory prototype. Since 2002 she has been with the Integrated
Systems Laboratory (IIS) of the ETH Zurich as research assistant. Her research
activity has been focused on high temperature characterization and modelling of
semiconductor devices.
Keywords: Silicon,
ionization, device architecture, semiconductor device, high temperature.
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