Series in Microelectronics
edited by
Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Gerhard Tröster
Bernd Witzigmann
Aniello Esposito,
Band Structure Effects
and Quantum Transport.
2011. X, 194 pages. ISBN 3-86628-378-4
and 978-3-86628-378-7
Abstract:
Topic of
this thesis is the development and extension of quantum transport simulators
for the modeling of nanowire and planar field effect transistors (FETs) at the
nanometer scale, as well as the investigation of band structure effects by
various atomistic methods in order to improve the effective mass approximation
(EMA) used by the present simulators. In this context, nonparabolicity (NP) models
have been developped and validated by means of detailed comparisons with a
full-band tight-binding quantum transport simulator. Inelastic scattering
processes and NP have been taken simultaneously into account for the simulation
of nanowire FETs in the final part of the work.
About the Author:
Aniello Esposito was born in
Z¨ urich, Switzerland, on August 06, 1979. He studied physics at the Swiss
Federal Institute of Technology (ETH) Z¨ urich with a focus on computational
methods for condensed matter physics and received his Dipl. Phys. Degree in Spring
2005. Topic of his diploma thesis was the investigation of Fermions in optical
lattices. In 2005 he joined the Integrated Systems Laboratory, ETHZ, as a
research and teaching assistant in the Technology CAD group. His research
interests comprise the band structure calculation and the simulation of quantum
transport in nanoscale devices as well as the implementation of related algorithms
on high performance compute clusters. In his spare time he enjoys riding
motorcycles.
Keywords: Quantum
Transport, Nanowire, Finite Element Method, Nonparabolicity, Pseudopotentials,
Tight-Binding
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