Series in Microelectronics
edited by
Wolfgang Fichtner
Qiuting Huang
Heinz Jäckel
Gerhard Tröster
Bernd Witzigmann
Hektor Meier,
Design, Characterization and
Simulation of Avalanche Photodiodes.
2011. VIII, 180 pages. ISBN 3-86628-380-6
and 978-3-86628-380-0
Abstract:
Two mesa
InAlAs/InGaAs separated absorption, charge and multiplication (SACM) avalanche
photodiodes (APDs) for next generation 10 Gbit/s fiber-to-the-home (FTTH)
passive optical networks (PON) are designed, characterized and analyzed. Furthermore,
a 25 Gbit/s APD prototype is presented.
The
analysis of the device performance is supported by the simulation of carrier
transport within the APD in presence of fast changing, high electric fields and
transport across hetero-junction band diagram energy offsets. For this purpose,
a transport simulator based on the Monte Carlo (MC) method is implemented. The
band structure is represented by a spherical, non-parabolic approximation with
three conduction band and three valence band valleys. The simulation results
show good agreement with measurements and give insight to performance critical
physics, such as carrier velocity overshoots and non-local impact ionization.
The simulator allows a quantitative design optimization of future APD devices.
About the Author:
Hektor Meier was born in Lucerne,
Switzerland, on April 6, 1981. From 2001 to 2006 he studied electrical
engineering at the Swiss Federal Institute of Technology (ETH) Zurich. He
received his Dipl. El.-Ing. ETH (MSc ETH) in 2006. In the same year he joined
the Integrated Systems Laboratory, ETH Zurich, as research assistant in the the
computational optoelectronics group. His re- search focus on the numerical
simulation of non-equilibrium car- rier transport and the design of
next-generation avalanche photo- diodes.
Keywords: photodiode, avalanche multiplication, non-local impact ionization,
non-equilibrium carrier transport, gain-bandwidth product, hetero junction,
Monte Carlo, simulation
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