Series in Microelectronics
edited by Qiuting Huang
Mathieu Maurice Luisier
Vol. 225: Zhelio Andreev,
Physics-based Simulation of III-V Nitride LEDs:
The Role of Polarization.
2015. XII, 132 pages. € 64,00.
This work presents a study of polarization effects in III-V nitride LEDs. The goal is to give a complete overview of the effects caused by built-in polarization in those devices using novel numerical simulation approaches.
The first part describes the internal efficacy in LED devices with different polarization, using a semi-classical approach. For the modeling of the LED structure a semi-classical drift-diffusion model developed within the author's research group is used. The effect of different materials and polarizations on the efficacy is studied. A novel method for improving the efficacy using a quaternary AlInGaN material is proposed.
In the second part a new approach for III-V nitride simulation, implementing Non-Equilibrium Greens Functions (NEGF) is presented. NEGF as a fully quantum mechanical simulation provides a better overview of the spatial and energetic distribution of carriers inside the LED structure, and can be used for detailed understanding of the processes taking place in polar and non-polar devices.
About the Author
Zhelio Andreev was born in Burgas, Bulgaria, in 1982. In 2005 he obtained his Bachelor degree from Sofia University, Bulgaria and in 2008 his Master degree from Jacobs University, Bremen. Subsequently he joined the Computational Electronics and Photonics Group at the University of Kassel. In 2015 he completed his doctorate on the computational modeling study of polarization effects in III-V nitride LEDs. His research interest comprises the improvement of efficacy in semiconductor light emitting devices.
Keywords: carrier transport; Polarization; energy distribution; scattering; Nitride LEDs; III-V Nitride Devices
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