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Series in Microelectronics

edited by         Wolfgang Fichtner
                        Qiuting Huang
                        Heinz Jäckel
                        Hans Melchior
                        George S. Moschytz
                        Gerhard Tröster

Vol. 156


Iwan Schnyder,
An Indium-Phosphide Double-Heterojunction Bipolar Transistor
Technology for 80 Gb/s Integrated Circuits
2005; 260 pages. € 64,00. ISBN 3-86628-000-9

Indium-phosphide double-heterojunction bipolar transistors (InP DHBTs) belong to the fastest transistor technologies today. The combination of excellent electron transport properties, low thermal resistivity, high breakdown voltages and modest lithography requirements makes InP DHBTs an optimal choice for state-of-the-art ultra-high-speed applications such as driver circuits.
In this work we present the development of an InP DHBT technology for 80 Gb/s circuits. This includes the design, fabrication, characterization and modeling of the DHBTs and the analysis, design, implementation and characterization of the 80Gb/s large-signal circuits.

Iwan Schnyder received the Dipl.-Ing. (MSc) and Dr. sc. techn. (PhD) degrees in information technology and electrical engineering from the Swiss Federal Institute of Technology (ETH), Zurich, Switzerland, in 1998 and 2005, respectively. He joined the Electronics Laboratory at ETH Zurich in 1998 as a research and teaching assistant in the InP HBT Group. His research interests include processing, characterization and small- and large-signal modeling of InP DHBTs and InP DHBT circuit design.

Keywords: Indium-Phosphide Double-Heterojunction Bipolar Transistor Technology, InP DHBT, InP/InGaAsP Processing, HBT Modeling, 80 Gb/s Integrated Circuits, 80 Gb/s Driver Circuits,80 Gb/s Multiplexer

Series in Microelectronics

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