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Series in Microelectronics

edited by       Wolfgang Fichtner
                        Qiuting Huang
                        Heinz Jäckel
                        Hans Melchior
                        George S. Moschytz
                        Gerhard Tröster

Vol. 166


Simon Brugger


Computation of Semiconductor Properties
Using Moments of the Inverse Scattering Operator
of the Boltzmann Equation

2006; 324 pages. € 64,00. ISBN 3-86628-062-9

This work investigates physical objects called moments of the inverse scattering operator (MISO) of the Boltzmann equation. These moments allow to compute all quantities which appear in semiconductor transport theory (e.g. mobilities, Hall factors, Langevin noise sources, ...) in an exact way, i.e. without using the well-known relaxation time approximation. In the first part, the existence and uniqueness of the MISOs are proven, and a numerical algorithm is given to actually compute all of them. The second part deals with fluctuation theory. The third part introduces the numerical methods and physical models underlying this work. In the last part the developed theory is applied to bulk silicon and silicon devices.


Simon Brugger was born in Geneva, Switzerland, on July 17, 1975. From 1993 to 1995 he took part three consecutive times in the international chemistry Olympiad (IChO) as member of the Swiss team. He studied physics at the Swiss Federal Institute of Technology (ETH) in Zurich. During an exchange year at the Humboldt University in Berlin he worked in the laboratory of Prof. T.W. Masselink in the domain of Quantum dots. He finished his studies at ETH Zurich with the master thesis entitled Two Homogeneous Cosmological Models of Quintessence in general relativity which was supervised by Prof. N. Straumann. In February 2001 he joined the Integrated Systems Laboratory at ETH, where he received his PhD degree in 2005. His research interests focus on semiconductor transport theory, fluctuation theory, numerical device simulation, and numerical mathematics.


Keywords: Halbleiter (semiconductor), Silizium (silicon), Boltzmanngleichung (Boltzmann equation), Inverse Streuoperator (inverse scattering operator), Jenseits der Relaxationszeit-Näherung (beyond the relaxation time approximation), Monte Carlo (Monte Carlo), Transportmodelle (transport models), Impedanzfeld-Methode (impedance field method), Methode der Finiten Elemente (finite element method), Simulation von elektronischen Bauelementen (simulation of electronic devices), Rauschparameter (noise parameters)


Series in Microelectronics

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