Series in Microelectronics

edited by        Wolfgang Fichtner
                        Qiuting Huang
                        Heinz Jäckel
                        Gerhard Tröster
                        Bernd Witzigmann

Vol. 173

Timm Höhr

Quantum-Mechanical Modeling of Transport
Parameters for MOS Devices.
2006; XIII, 134 pages. € 64,00. ISBN 3-86628-087-4


Based on simulations with the device simulator DESSIS_ISE, this work investigates implications of quantization on the modeling of three kinds of transport effects in MOS devices. The first part deals with the question to what extend tunneling currents through insulating barriers can be described within the quantum drift-diffusion model. The second part introduces and investigates a consistent way of modeling Shockley-Read-Hall recombination in the presence of quantization. The third part describes a model for the drift mobility in MOS channels. Special emphasis is put on the influence of remote Coulomb scattering by impurities in the polysilicon gate electrode.


Timm Höhr was born in Celle, Germany, on December 10, 1972. He studied physics at the University of Konstanz where he received his Dipl.-Phys. degree in 2000. In the academic year 1996/97 he attended the State University of New York at Stony Brook. In 2001 he joined the Integrated Systems Laboratory at ETH Zurich where he worked on numerical modeling of quantization and related transport phenomena in MOS devices.


Keywords: semiconductor device modeling, quantum transport, tunneling effect, Shockley-Read-Hall recombination, drift mobility, density gradient model, recombination lifetime, remote Coulomb scattering, ultrathin gate oxide, quantum confinement, quantum effects, MOS diode, MOSFET, quantum drift-diffusion model, resonant tunneling, negative differential resistance, quantum well, inversion layer mobility.


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